Electron paramagnetic resonance study of porous silicon

S. V. Bhat, K. Jayaram, D. V. S. Muthu, A. K. Sood

Applied Physics Letters · 1992 · 22 citations · 7 references

Concepts

Abstract

Electron paramagnetic resonance studies under ambient conditions of boron-doped porous silicon show anisotropic Zeeman (g) and hyperfine (A) tensors, signaling localization of the charge carriers due to quantum confinement.

References

7