Enhanced ferroelectric properties of Cr-doped BiFeO3 thin films grown by chemical solution deposition

Abstract

Multiferroic Cr-doped BiFeO3 (BFO) thin films were prepared on Pt∕TiO2∕SiO2∕Si(100) substrates by a chemical solution deposition method. From the x-ray photoelectron spectroscopy measurements, it was observed that the valence number of Fe ion in undoped and Cr-doped BFO thin films was found to be almost 3+. It was found that Cr-doped BFO thin films exhibited good ferroelectric properties, such as improved leakage-current density and P-E hysteresis characteristics. The 3mol% Cr-doped BFO thin film showed a leakage-current density of 9.2×10−7A∕cm2 at 100kV∕cm and a large remanent polarization (Pr) of 61μC∕cm2 at room temperature.