Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition

Abstract

Non-doped 3C-SiC epilayers having mobility higher than 750 cm 2 /(V ·s) at room temperature and 3000 cm 2 /(V ·s) around 66 K were obtained for the first time, using large size (60×70 mm 2 ) Si substrates. The conditions for obtaining such high-mobility epilayers are discussed in terms of the distribution of the electrical properties over the epilayers and their substrate size dependence.