IEEE Transactions on Nuclear Science · 1996 · 19 citations · 10 references
Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringAnode StripStrip DamageApplied PhysicsEducationMicroreactorsMicroscale SystemChamber DesignInstrumentationAmorphous Silicon CarbideMicroelectronicsSilicon On InsulatorCarbideElectrical Insulation
Hydrogenated amorphous silicon carbide (a-Si:C:H) has been used as an insulating support pedestal for the anode strip in microgap gas chambers (MGCs) in an attempt to make a thicker high quality insulating layer. MGCs having 2.3 or 4.6 /spl mu/m thick a-Si:C:H and 2.0 /spl mu/m thick SiO/sub 2/ insulating layers have been built and tested. In this paper, the results of gas gains, strip damage by discharges, and preliminary aging studies are presented.
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