Excimer laser etching of transparent conducting oxides

Abstract

Laser etching of transparent conducting films of fluorine-doped tin oxide and indium-tin oxide has been investigated using an excimer laser at 248 nm. The etch depth per pulse as a function of laser fluence was measured and compared with the predictions of an explicit finite difference thermal model. Direct laser patterning of these films was demonstrated. The sheet resistance of a 50-μm-wide conducting channel formed by laser ablation was measured and compared with the value for the original film.