Japanese Journal of Applied Physics · 2004 · 91 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingIii-v SemiconductorsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor SurfacesSolar CellsBuffer LayersPassivation LayersSolar Cell Device PhysicsSolar Cell Fabrication
The recent development of a chemical-bath-deposited (CBD) ZnS(O,OH) layer that enabled an 18.5%-efficient copper indium gallium diselenide (CIGS) devices using a single-layer of CBD ZnS(O,OH) is reported in this paper. Such buffer layers could potentially replace CdS in the CIGS solar cell.