Applied Physics Letters · 2004 · 86 citations · 11 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceEpitaxial GrowthPerovskite MaterialsSemiconductor Crystal GrowthSemiconductor InterfacesSemiconductor SurfacesSemiconductor Thin FilmsCrystal Growth MechanismsEarly-stage GrowthHeteroepitaxyMolecular Beam EpitaxyPerovskite OxidesPerovskite SemiconductorsReflection High-energy Electron DiffractionTransmission Electron Diffraction
Hetero-epitaxy of single-crystal perovskite SrTiO3 on GaAs(001) was achieved using molecular beam epitaxy. The growth was accomplished by deposition of a submonolayer of titanium on GaAs(001), followed by the co-deposition of strontium and titanium initiated at a low-temperature, low-oxygen-pressure condition. X-ray photoelectron spectroscopy showed that the Ti prelayer reacted with As and formed TiAs-like species on the As terminated GaAs(001) surface. Reflection-high-energy-electron diffraction showed that SrTiO3 grew coherently on the GaAs(001) at early stage of growth. This coherent behavior began to degrade when SrTiO3 thickness exceeded 20Å. Cross-sectional transmission electron microscopy revealed an abrupt interface between SrTiO3 and GaAs and good crystallinity of the SrTiO3 film. An epitaxial relationship between SrTiO3 and GaAs was further confirmed by x-ray diffraction. The success of growth of SrTiO3 on GaAs paves the way for integration of various functional perovskite oxides with GaAs.
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Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation
M. Hong, J. Kwo, A. R. Kortan et al. · Science · 1999 · 419 citations
Natural Sciences, Electrical Engineering, Materials Science +17
Field effect transistors with SrTiO3 gate dielectric on Si
K. Eisenbeiser, J. Finder, Zhiping Yu et al. · Applied Physics Letters · 2000 · 296 citations