Structure-sensitive spectroscopy of transition-metal-hydrogen complexes in silicon

Abstract

Several centers that involve Pt and H have been introduced into n-type Si and studied by electron paramagnetic resonance and vibrational spectroscopy to provide unique structure-sensitive data for an H-passivated deep level impurity. Through the observation of Pt-H and -D hyperfine interactions, a new Pt-${\mathrm{H}}_{2}$ complex has been identified. This defect is still electrically active and its level has been located. Several vibrational bands due to Pt and H related centers were also found. H stretching bands at 1888.2 and 1889.5 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ are assigned to the different charge states of the Pt-${\mathrm{H}}_{2}$ defect.