OPTICAL AND ELECTRICAL PROPERTIES OF <font>SnO</font>₂ THIN FILM PREPARED USING RTO METHOD

Abstract

Transparent and conducting SnO 2 thin film has been produced on quartz substrate using rapid thermal oxidation of pure Sn in air at different oxidation temperature and oxidation time. The transmittance T in the visible and NIR was investigated, the allowed direct energy gap was determined to be 3.18 eV at optimum condition of 600° and 90 s. The dependence of the resistivity on the film thickness and oxidation time has been studied. The optimum thickness of high transmittance and lowest resistivity is about 150 nm for SnO 2 were ρ = 2 × 10 -2 Ω cm and T = 88%.