Publication | Closed Access
In-Situ TID Test of 4-Gbit DDR3 SDRAM Devices
18
Citations
8
References
2013
Year
Unknown Venue
In-situ Tid TestTotal-dose EffectsEngineeringAdvanced Packaging (Semiconductors)Peculiar Error PatternFlash MemoryComputer EngineeringSemiconductor MemoryElectronic PackagingInstrumentationMicroelectronicsDosimetryRadiology
4-Gbit DDR3 SDRAM devices have been tested for total-dose effects up to 400 krad. Some devices show a very peculiar error pattern, depending on the time a page is kept active.
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