Growth of Transparent, Large Size GaN Single Crystal with Low Dislocations Using Ca-Na Flux System

Abstract

Growth of large and transparent GaN single crystals was carried out by applying the liquid phase epitaxy (LPE) method in a Ca-Na mixed flux system. We have previously reported LPE growth of GaN in a Na flux system, and that GaN crystals grown by LPE have extreme low dislocations and show excellent photoluminescence characteristics. In this study, use of a Ca-Na mixed flux system enabled us to grow transparent GaN crystals under low nitrogen pressure and to further improve the photoluminescence (PL) characteristic. The dislocation density of this crystal is very low (2 ×105 cm-2 in highest point).