New approach to projection-electron lithography with demonstrated 0.1 μm linewidth

Abstract

We present a new approach to projection-electron lithography which allows sub-0.1 μm resolution to be achieved with short exposure times and a parallel illumination system. We have printed a grating pattern into PMMA with 0.1 μm linewidths. Our new technique consists of using an angularly limiting filter which differentiates electrons that have traversed a transparent mask in terms of the degree of scattering between the patterned and unpatterned regions.