Spatial expansion of the electron-hole plasma in GaAs

Dynamical screening and self‐energy of excitons in the electron–hole plasma

Ralf Zimmermann, K. Kilimann, W. D. Kraeft et al. · physica status solidi (b) · 1978 · 268 citations

Charge Excitations, Continuum Edge, Engineering +14

MEASUREMENT OF THE VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE

J. G. Ruch, G. S. Kino · Applied Physics Letters · 1967 · 197 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Screening of hot-carrier relaxation in highly photoexcited semiconductors

Ellen J. Yoffa · Physical review. B, Condensed matter · 1981 · 183 citations

Engineering, Polar Semiconductors, Optoelectronic Devices +17

Electron-hole plasma in direct-gap semiconductors with low polar coupling: GaAs, InP, and GaSb

O. Hildebrand, E. O. Goebel, K.M. Romanek et al. · Physical review. B, Condensed matter · 1978 · 96 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Thermalization of the Electron—Hole Plasma in GaAs.

E. O. Goebel, O. Hildebrand · physica status solidi (b) · 1978 · 93 citations

Categoryquantum Electronics, Optical Materials, Engineering +19