Electrical and optical properties of tin oxide films doped with F and (Sb+F)

E. Shanthi, Arghya Narayan Banerjee, Viresh Dutta, K. L. Chopra

Journal of Applied Physics · 1982 · 244 citations · 15 references

Concepts

Abstract

This paper presents the structural, electrical, and optical properties of F- and (Sb+F)-doped tin oxide films prepared by spray pyrolysis technique. Resistivity as low as 5.5×10−4 Ω cm with high optical transmission (≳80%) and high infrared reflection (∼90%) have been obtained in F-doped tin oxide films. The figure of merit ΦTC = T10/Rsh (52.6×10−3Ω−1 at 0.65μm) of these films is the highest amongst the results reported on doped tin oxide films. The variation of mobility with doping concentration has been analyzed to understand the electron–conduction mechanism. The Drude theory has been used to explain the optical properties near the plasma edge.

References

15