Applied Physics Letters · 1997 · 34 citations · 12 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsIii-v SemiconductorsOptical Properties Of SemiconductorsSemiconductor PhysicsStrain AnalysisStress-strain BehaviorWide-bandgap SemiconductorsDeformationGallium NitrideReflectance SpectroscopyStrain EffectsStrain Effects On Electronic PropertiesUniaxial StrainValence BandValence Band Structure
The uniaxial stress effects on valence band structures in GaN are investigated by reflectance spectroscopy. It is observed that the energy separation between A and B valence bands increases with the application of uniaxial stress in the c plane. The experimental results are analyzed on the basis of the k⋅p theory, and deformation potential D5 is determined as −3.3 eV. It is indicated that the uniaxial strain effect could be utilized for improving GaN-based laser performance.
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Exciton region reflectance of homoepitaxial GaN layers
K.P. Korona, Kiriy P.A., R. Stępniewski et al. · Applied Physics Letters · 1996 · 146 citations