Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH4 and SiH4 gases - Concepedia

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Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH4 and SiH4 gases

24

Citations

7

References

1994

Year

Masao Sakuraba, Junichi Murota, Takeshi Watanabe, Yasuji Sawada, Shoichi Ono

Applied Surface Science

Electrical EngineeringEpitaxial GrowthSih4 GasesEngineeringPhysicsNanoelectronicsApplied PhysicsMolecular Beam EpitaxySilicon On InsulatorMicroelectronicsFlash-heating CvdOptoelectronicsChemical Vapor DepositionAtomic-layer Epitaxy Control

References

	Year	Citations

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