Electronics Letters · 1988 · 45 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsEpitaxial GrowthHigh-frequency Semiconductor DevicesLaser PhysicsOptical SourcesSemiconductor LasersWide-bandgap Semiconductor DevicesBandwidthCapacitanceEpitaxial Film GrowthHigh-power LasersHigh-power Semiconductor LasersParasitic CapacitanceParasitic Capacitance ReductionPower Output
A high-power, high-speed GaInAsP/InP laser operating at a 1.3μm wavelength is described. The laser is obtained with three epitaxial growth steps and has semi-insulating InP blocking layers resulting in low parasitic capacitance. A 3 dB bandwidth of 14.7 GHz together with 38 mW output power has been achieved.
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Ultra-high speed semiconductor lasers
Kam Y. Lau, A. Yariv · IEEE Journal of Quantum Electronics · 1985 · 237 citations
High-speed InGaAsP constricted-mesa lasers
John E. Bowers, B. R. Hemenway, A.H. Gnauck et al. · IEEE Journal of Quantum Electronics · 1986 · 185 citations
Wide-bandwidth modulation of three-channel buried-crescent laser diodes
U. Koren, G. Eisenstein, John E. Bowers et al. · Electronics Letters · 1985 · 15 citations