InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650 nm range - Concepedia

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InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650 nm range

24

Citations

5

References

2006

Year

S. V. Ivanov, V. N. Jmerik, T. V. Shubina, S. B. Listoshin, A. M. Mizerov, Minho Kim, Masayoshi Koike, Bumjoon J. Kim, Pyotr S. Kop’ev

Journal of Crystal Growth

PhotonicsSolid-state LightingEngineeringPhotoluminescencePhysicsApplied PhysicsQuantum WellsIntense Room-temperature PhotoluminescenceIngan-based EpilayersOptoelectronic DevicesLuminescence PropertyOptoelectronicsCompound Semiconductor

References

	Year	Citations

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