Journal of Physics D Applied Physics · 2009 · 118 citations · 29 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsMaterials ChemistryThin FilmsElectrical Properties Of CeramicsFerroelectric MaterialsPiezoelectric CeramicsPiezoelectric MaterialsThin Film Electrical PropertiesThin-film MaterialsFatigue ResistanceFerroelectric PropertiesLeakage CurrentPiezoelectric EffectPiezoelectric PropertiesPiezoelectric Thin FilmsThin Film FerroelectricsThin-film Piezoelectrics
We have fabricated K0.5Na0.5NbO3 (KNN) thin films on Pt substrates by a chemical solution deposition method and investigated the effect of K and Na excess (0–30 mol%) on ferroelectric and piezoelectric properties of KNN thin film. It was found that with increasing K and Na excess in a precursor solution from 0 to 30 mol%, the leakage current and ferroelectric properties were strongly affected. KNN thin film synthesized by using 20 mol% K and Na excess precursor solution exhibited a low leakage current density and well saturated ferroelectric P–E hysteresis loops. Moreover, the optimized KNN thin film had good fatigue resistance and a piezoelectric constant of 40 pm V−1, which is comparable to that of polycrystalline PZT thin films.
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