Applied Physics Letters · 2013 · 32 citations · 20 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistrySurface ChemistrySurface ScienceMetal OxidesSurface Chemistry Of SolidsSurface DiffusionSurface PhysicsSurface ReactionsSurface ReactivityAmorphous Indium Gallium Zinc OxideAnnealingDiffusivityIsotope Exchange KineticsIsotope Exchange ProcessesIsotope Exchange ReactionsOxygen DiffusionPost-deposition Annealing
An isotope tracer study, i.e., 18O/16O exchange using 18O2 and H218O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium–gallium–zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200 °C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for 18O2 than for H218O. PDA in a humid atmosphere at 400 °C further suppressed the reactivity of O2 at the a-IGZO film surface, which is attributable to –OH-terminated surface formation.
20
Anderson Janotti, Chris G. Van de Walle · Physical Review B · 2007 · 2.4K citations
Hydrogen as a Cause of Doping in Zinc Oxide
Chris G. Van de Walle · Physical Review Letters · 2000 · 2.2K citations · Full text