Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC

Abstract

Nitrogen incorporation kinetics during the sublimation boule growth of SiC have been studied in terms of several growth parameters. 6H and 4H SiC crystals were heavily doped with nitrogen as a donor. It was found that the growth rate has little influence on the doping concentration, indicating that nitrogen incorporation is not kinetically limited at normal growth rates in the sublimation growth. On the other hand, surface polarity and polytype were found to influence the nitrogen incorporation kinetics at the growth front. By optimizing the growth conditions, bulk resistivities as low as 7.6×10 -3 Ω cm and 5.3×10 -3 Ω cm were obtained for 6H and 4H SiC, respectively.