IEEE Electron Device Letters · 1990 · 38 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsCurrent DensityHigh-frequency ElectronicsMillimeter-wave Integrated CircuitsMillimeter-wave TransistorsPower DensityPower Density EnhancementSilicon-on-insulator TechnologyTransconductance
The millimeter-wave power performance of a 75- mu m*0.3- mu m InP MISFET with SiO/sub 2/ insulator is presented. The combination of high intrinsic transconductance (120 mS/mm), current density (1 A/mm), and gate-source and gate-drain breakdown voltages (35 V) led to a record power density of 1.8 W/mm and 20% power-added efficiency at 30 GHz. This power density is the highest ever reported for any three-terminal device at this frequency.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
6
InGaAs pseudomorphic HEMTs for millimeter wave power applications
P.M. Smith, P.C. Chao, L. F. Lester et al. · 2003 · 40 citations
High-efficiency GaInAs Microwave MISFET's
Peter Gardner, D. Bechtle, S.Y. Narayan et al. · IEEE Electron Device Letters · 1987 · 16 citations