An InP MISFET with a power density of 1.8 W/mm at 30 GHz

Abstract

The millimeter-wave power performance of a 75- mu m*0.3- mu m InP MISFET with SiO/sub 2/ insulator is presented. The combination of high intrinsic transconductance (120 mS/mm), current density (1 A/mm), and gate-source and gate-drain breakdown voltages (35 V) led to a record power density of 1.8 W/mm and 20% power-added efficiency at 30 GHz. This power density is the highest ever reported for any three-terminal device at this frequency.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>