20 nm electron beam lithography and reactive ion etching for the fabrication of double gate FinFET devices - Concepedia

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20 nm electron beam lithography and reactive ion etching for the fabrication of double gate FinFET devices

22

Citations

5

References

2003

Year

Johannes Kretz, L. Dreeskornfeld, J. Hartwich, W. Rösner

Microelectronic Engineering

Electrical EngineeringEngineeringElectron-beam LithographyBeam LithographyMicrofabricationNanotechnologyNanoelectronicsApplied PhysicsSemiconductor Device FabricationMicroelectronicsNanolithography MethodReactive IonSemiconductor Device

References

	Year	Citations

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