30.2: Active Matrix Electrophoretic Displays on Temporary Bonded Stainless Steel Substrates with 180 °C a‐Si:H TFTs

Abstract

Abstract A low temperature, 180 °C, amorphous Si (a‐Si:H) process on bonded stainless steel substrates is discussed and a 3.8‐inch QVGA active matrix (AM) electrophoretic display as well as a 64×64 electrophoretic display with integrated column drivers are demonstrated. The n‐channel thin‐film transistors (TFTs) exhibited saturation mobilities of 0.7 cm 2 /V‐sec, median drive currents of 26.2 μA and low defectivity.