Avalanche Breakdown in Epitaxial SiC <i>p-n</i> Junctions

Abstract

The reverse current-voltage characteristics of epitaxial SiC p-n junctions were investigated. After electrolytic etching the junctions showed sharp breakdown. The largest value found for the maximum field at breakdown is 5×106 V/cm. Microplasma pulses were observed analogous to but three orders-of-magnitude smaller than those hitherto reported for other materials.