First nucleation rule for solid-state nucleation in metal-metal thin-film systems

Abstract

We extend our previous considerations of low-temperature phase nucleation in transition metal (Tm) silicon systems to thin-film metal-metal systems. We particularly concentrate on the similarities and differences between Tm-Si (and Tm-Ge) systems and metal-metal systems. Most of the metal-metal low-temperature reaction data has been previously presented in an article by Campisano, or in the book by Baglin and Poate, which we have reorganized and discussed in terms of a rule for first phase nucleation for these systems. Finally, we suggest a model for Pd80 Si20 glass formation in terms of the general model recently introduced by Phillips.