Stimulated Emission from Donor Transitions in Silicon

Abstract

The observation of far-infrared stimulated emission from shallow donor transitions in silicon is reported. Lasing with a wavelength of $59\ensuremath{\mu}\mathrm{m}$ due to the neutral donor intracenter ${2p}_{0}\ensuremath{\rightarrow}1s(E)$ transition in Si:P pumped by ${\mathrm{CO}}_{2}$ laser radiation is obtained. Populations of ${D}^{0}$ and ${D}^{\ensuremath{-}}$ center states and the balance of the radiation absorption and amplification are theoretically analyzed.