R. Kh. Zhukavin - Concepedia

Author

R. Kh. Zhukavin

Institute for Physics of Microstructures ORCID

Also Known As

R K Zhukavin, R Kh Zhukavin, R. K. Zhukavin, R. Kh. Zhukavin, R. Zhukavin, R.K. Zhukavin, R.Kh Zhukavin, R.Kh. Zhukavin, R. Kh. Zhukavin, R. Kh. Zhukavin

157

Publications

940

Citations

H-Index

Concepts

All Affiliations

Institute for Physics of Microstructures Leibniz Institute for Crystal Growth Deutsches Zentrum für Luft- und Raumfahrt e. V. (DLR)Institute for Atomic and Molecular Physics Helmholtz-Zentrum Dresden-Rossendorf

About

R. Kh. Zhukavin is an author at Institute for Physics of Microstructures specializing in physics, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	22	663
2	Applied Physics	16	22	663
3	Natural Sciences	3	3	122
4	Chemistry	2	2	103
5	Electrical Engineering	2	2	32

R. Kh. Zhukavin

Publications

796

Citations

H-Index

Page 1

	Year	Citations
Stimulated Emission from Donor Transitions in Silicon R. Kh. Zhukavin, E. E. Orlova, V. N. Shastin, Physical Review Letters Optical PumpingPhotonicsPhotoluminescenceEngineeringPhysics	2000	160
Stimulated Terahertz Stokes Emission of Silicon Crystals Doped with Antimony Donors S. G. Pavlov, H.-W. Hübers, J. N. Hovenier, Physical Review Letters	2006	60
Far-infrared stimulated emission from optically excited bismuth donors in silicon Heinz‐Wilhelm Hübers, R. Kh. Zhukavin, E. E. Orlova, Applied Physics Letters Optical MaterialsEngineeringLaser ScienceLaser PhysicsLaser Applications	2002	59
Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation V. N. Shastin, R. Kh. Zhukavin, E. E. Orlova, Applied Physics Letters Optical PumpingPhotonicsPhotoluminescenceTerahertz SpectroscopyBismuth Donors	2002	48
Stimulated terahertz emission from arsenic donors in silicon Heinz‐Wilhelm Hübers, S. G. Pavlov, H. Riemann, Applied Physics Letters EngineeringLaser ApplicationsChemistrySilicon On InsulatorTerahertz Photonics	2004	44
Terahertz optically pumped Si:Sb laser Heinz‐Wilhelm Hübers, H. Riemann, R. Kh. Zhukavin, Journal of Applied Physics Thz PhotonicsOptical MaterialsEngineeringLaser ScienceLaser Applications	2002	40
The physical principles of terahertz silicon lasers based on intracenter transitions S. G. Pavlov, R. Kh. Zhukavin, V. N. Shastin, physica status solidi (b) Physical PrinciplesThz PhotonicsTerahertz TechnologyOptical MaterialsIntracenter Transitions	2012	39
Population inversion and far-infrared emission from optically pumped silicon H.-W. Hübers, K. Auen, E. E. Orlova, Applied Physics Letters Optical PumpingPhotonicsOptical MaterialsEngineeringPhotoluminescence	1999	31
Low-threshold terahertz Si:As laser S. G. Pavlov, Ute Böttger, Heinz‐Wilhelm Hübers, Applied Physics Letters Thz PhotonicsOptical MaterialsTerahertz TechnologyEngineeringLaser Science	2007	21
Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon R. Kh. Zhukavin, V. V. Tsyplenkov, K. A. Kovalevsky, Applied Physics Letters Terahertz TechnologyEngineeringSilicon CrystalLaser MaterialAntimony Donors	2007	19

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