Schottky-collector vertical PNM bipolar transistor

Abstract

A submicrometre inverted vertical PNM bipolar transistor with a platinum-silicide (PtSi) silicon Schottky collector-base diode and a p+n emitter-base diode is demonstrated. The transistor presents normal bipolar device characteristics with a DC current gain as high as 40. Faster switches can be made by using PNM transistors. They offer a desirable performance leverage when implemented in VLSI logic circuits.