Simple scheme to increase hold voltage for silicon‐controlled rectifier

Abstract

A simple scheme is proposed to increase the hold voltage and not change the original trigger voltage of a silicon‐controlled rectifier (SCR) to enhance its latch‐up immunity without changing the device dimensions. It is found that using the lightly doped P‐diffusion instead of the highly doped P + diffusion as the P emitter of the anode can increase the hold voltage of an SCR.