Interaction of Cs and O with GaAs(100) at the overlayer–substrate interface during negative electron affinity type activations

The structure and properties of metal-semiconductor interfaces

L. J. Brillson · Surface Science Reports · 1982 · 924 citations

Engineering, Materials Engineering, Materials Science +12

Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm range

Dennis G. Fisher, R.E. Enstrom, J. S. Escher et al. · Journal of Applied Physics · 1972 · 155 citations

Engineering, Materials Engineering, Materials Science +17

Photoelectron spectroscopic determination of the structure of (Cs,O) activated GaAs (110) surfaces

Ching‐Yuan Su, W. E. Spicer, I. Lindau · Journal of Applied Physics · 1983 · 143 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electronic states and effective negative electron affinity at cesiated <i>p</i>-GaN surfaces

Chih‐I Wu, Antoine Kahn · Journal of Applied Physics · 1999 · 106 citations

Natural Sciences, Materials Engineering, Materials Science +17

The theory of the workfunction of caesium suboxides and caesium films

M G Burt, Volker Heine · Journal of Physics C Solid State Physics · 1978 · 94 citations

Natural Sciences, Materials Science, Physics +17