Publication | Closed Access
Liquid-delivery MOCVD: chemical and process perspectives on ferro-electric thin film growth
38
Citations
0
References
2000
Year
EngineeringSolid-state ChemistryChemistryLiquid-delivery MocvdChemical DepositionInorganic MaterialChemical EngineeringApplied ChemistryProcess PerspectivesHybrid MaterialsThin Film ProcessingMaterials ScienceMaterials EngineeringInorganic ChemistryOxide ElectronicsTetraglyme AdductsInorganic SynthesisElectrochemistryThin Film PztApplied PhysicsDelivery MethodologiesThin FilmsChemical Vapor Deposition
MOCVD processes for (Ba,Sr)TiO3 (BST) and Pb(Zr,Ti)O3 (PZT) are described based on different metal – organic precursors. In the case of BST, processes using polyamine and tetraglyme adducts of group II metals were compared. Similar incorporation efficiencies were obtained at 640 °C for both adducts, and electrical properties were comparable. Delivery methodologies were compared using the tetraglyme adducts for BST. Composition control was equivalent using liquid mass flow controllers versus a positive displacement pump. For PZT, Zr(thd)4 and Zr(OiPr)2(thd)2 were compared as source materials in combination with Ti(OiPr)2(thd)2 and Pb(thd)2(pmdeta). The mixed ligand Zr source increased Zr incorporation efficiency by a factor of nearly eight for otherwise equivalent processes centred at 590 °C, and run to run repeatability was 0.1 at% for Pb and 0.6 at% for Zr (1 σ) over a series of more than 300 films. The electrical properties of thin film PZT deposited with Zr(OiPr)2(thd)2 compared favourably with those obtained previously with Zr(thd)4. Copyright © 2000 John Wiley & Sons, Ltd.