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Effects of argon pressure and substrate temperature on the structure and properties of sputtered copper films
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1981
Year
Thin Film PhysicsEngineeringThin Film Process TechnologyChemical DepositionSurface TechnologySputtered Copper FilmsSubstrate TemperatureIntrinsic StressArgon PressureMagnetic Thin FilmsEpitaxial GrowthThin Film ProcessingMaterials EngineeringMaterials SciencePhysicsCopper FilmsMicroelectronicsSurface CharacterizationNatural SciencesSurface ScienceApplied PhysicsThin Film DevicesThin FilmsChemical Vapor DepositionStructure Zone Model
The influence of substrate temperature (20 °– 450 °C) and sputter gas pressure (0.5–100 Pa) on the evolution of coating morphology during growth of magnetron deposited copper films has been investigated for film thicknesses up to 10 μm. Classification of films according to structure and surface topography yields a structure zone model with substrate temperature and argon gas deposition pressure dependence which is in basic agreement with a general model proposed by Thornton. The structural variations can be accounted for in terms of the interaction of various coating atom condensation processes and effects associated with increased water vapor partial pressure and the formation of intrinsic stress in the films.