Transparent indium zinc oxide ohmic contact to phosphor-doped n-type zinc oxide

Abstract

Transparent indium zinc oxide (IZO) ohmic contacts to phosphor-doped n-type ZnO have been formed. The resistance, transmittance, and phase reliability of the contacts were investigated. As deposited, an ohmic contact was formed with a specific contact resistance of about 1.1×10−4Ωcm2 and the transmittance of the ZnO∕IZO (520∕350nm) film was more than 75% in the 450–1100nm wavelength range. After annealing at 400°C for 5min in a vacuum (2×10−5mbar), the specific contact resistance was reduced by about two orders of magnitude to 3.8×10−6Ωcm2, while maintaining the contact stability and high optical transparency.