Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2006 · 13 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesSemiconductor Device MaterialsSemiconductor LasersSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBeam DivergenceDiode Laser Threshold CurrentGallium Nitride (Gan) MaterialsHigh-power Laser DiodesMaximum OutputMaximum Power OutputPower OutputSemiconductor Laser Diodes
High power and high efficiency AlInGaN-based laser diodes with 405 nm were fabricated for the post-DVD applications. Magnesium doped AlGaN/GaN multiple quantum barrier (MQB) layers were introduced into the laser diode structure, which resulted in considerable improvement in lasing performances such as threshold current and slope efficiency. Asymmetric waveguide structure was used in order to improve the characteristics of laser diodes. Aluminum content in the n-cladding layer was varied in connection with the vertical beam divergence angle and COD level. By decreasing Al content in the n-cladding layer, the vertical divergence angle was reduced to 17 degree and the COD level was enhanced to over 300mW. The maximum output power reached as high as 470 mW, the highest value ever reported for the narrow-stripe GaN LDs. In addition, the fundamental transverse-mode operation was clearly demonstrated up to 500 mW-pulsed output power.