EPR of iron‐boron centres in silicon

Abstract

Abstract The EPR spectra of one type of iron‐boron centres detected in low‐resistivity B‐doped p‐silicon after iron doping are investigated in detail. The spectra are characterized by a dominating zerofield splitting and a resolved SHF structure due to the interaction with the boron isotopes and arise from interstitially incorporated Fe + ions adjacent in 〈111〉 directions to B − ions on substitutional sites.