physica status solidi (a) · 1975 · 33 citations · 9 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsAlloysDislocations In SemiconductorsSemiconductor DefectsSemiconductor Device MaterialsSemiconductor PhysicsTransmission Electron MicroscopyAlloyingAlloying EffectsAlloying ElementsMicroscopyNear-surface CharacterizationSemiconductor AlloyingSemiconductor CharacterizationSurface Defects Characterization
Single crystal GaAs samples, containing Au films of thicknesses in the range 400 to 4500 Å, have been alloyed at 550 °C for variable periods of time. Transmission electron microscopy studies of the substrate have revealed the presence of hexagonal AuGa, Au precipitation, and high dislocation densities as a function of depth into the sample. A thin heavily disordered near-surface region has been shown to arise from the high Au concentration and the outdiffusion of Ga and As at longer processing times.
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Alloying Behavior of Au and Au–Ge on GaAs
J. Gyulai, J. W. Mayer, Vincent Rodriguez et al. · Journal of Applied Physics · 1971 · 122 citations