Journal of Physics D Applied Physics · 2008 · 115 citations · 43 references
EngineeringMagnetic Logic ApplicationsMagnetic MaterialsMagnetoresistanceMagnetic SensorMagnetismMagnetic Data StorageNanoelectronicsEhe PropertiesMagnetic Thin FilmsMagnetic SensorsMaterials ScienceElectrical EngineeringExtraordinary Hall EffectPhysicsMicroelectronicsMagnetic MaterialMagnetic MediumSpintronicsNatural SciencesThin Magnetic FilmsCondensed Matter PhysicsApplied PhysicsThin FilmsMagnetic Device
The study investigates how the extraordinary Hall effect in out‑of‑plane magnetic thin films can be harnessed for sensors, memories, and logic, showing that achieving CMOS‑compatible output voltage requires increasing longitudinal resistivity at smaller sizes while preserving a large Hall angle. The authors measured and compared the EHE properties of several out‑of‑plane anisotropic materials—including Co/Pt multilayers, FePt alloys, rare‑earth/transition‑metal alloys, and CoSiOx/CoPtSiOx composites—to assess their suitability for the targeted applications. The study finds that while EHE scales to sub‑micron devices, it is not yet viable at the 22 nm node because no material offers the necessary combination of high longitudinal resistivity and large Hall angle, and that achieving CMOS‑compatible output voltage requires increasing resistivity as size decreases.
We investigate the potential of the extraordinary Hall effect (EHE) in magnetic thin films with out-of-plane anisotropy for sensors, memories or logic applications. The scalability of EHE at decreasing lateral dimension has been first explored. In order for EHE to provide output voltage compatible with CMOS technology, it is shown that the longitudinal resistivity of the magnetic material must be considerably increased at decreasing size while keeping a large Hall angle. Then the EHE properties of various classes of materials with out-of-plane anisotropy ((Co/Pt) multilayers, FePt ordered alloys, rare-earth/transition metal alloys, CoSiOx and CoPtSiOx heterogeneous composites) are measured and compared in order to evaluate their potential for the envisioned applications. It is concluded that while EHE can readily be used for large devices (size > micrometres), no materials are yet available which offer suitable scalability towards the 22 nm microelectronic node.
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G. A. Prinz · Science · 1998 · 3.6K citations
Theory of the Hall Effect in Ferromagnetic Substances
J. M. Luttinger · Physical Review · 1958 · 441 citations