Applied Physics Letters · 1984 · 35 citations · 5 references
Natural SciencesMaterials SciencePhysicsMicrofabricationOpticsSurface ScienceEtching ProcessesThin Film EtchingEtch Mask FabricationFocused Ion Beam LithographyFocused Ion Beam MachiningIon Beam EtchingIon Beam Surface TreatmentPhotoresistsPlasma EtchingSelectivity
Ion beam etching has been successfully applied to InP using an Ar/O2-gas mixture. Varying angles of beam incidence resulted in different shapes of the etched profiles with the achievement even of undercutting. Good selectivity with respect to Novolak-type photoresists prevails at higher accelerating voltages.
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GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facet
L.A. Coldren, Kenichi Iga, B.I. Miller et al. · Applied Physics Letters · 1980 · 105 citations
Reactive ion beam etching of InP with Cl2
M. A. Bösch, L.A. Coldren, E. Good · Applied Physics Letters · 1981 · 56 citations