A. Steckenborn

Determination of Young's moduli of micromechanical thin films using the resonance method

Laura Kiesewetter, J.-M. Zhang, D. Houdeau et al. · Sensors and Actuators A Physical · 1992 · 163 citations

Materials Science, Engineering, Micromechanics +12

Localization induced electron-hole transition rate enhancement in GaAs quantum wells

J. Christen, D. Bimberg, A. Steckenborn et al. · Applied Physics Letters · 1984 · 121 citations · Full text

Semiconductors, Photonics, Quantum Science +13

Kinetics of relaxation and recombination of nonequilibrium carriers in GaAs: Carrier capture by impurities

D. Bimberg, H. Münzel, A. Steckenborn et al. · Physical review. B, Condensed matter · 1985 · 94 citations

Semiconductors, Electronic Excited State, Photoluminescence +14

Micropyramidal hillocks on KOH etched {100} silicon surfaces: formation, prevention and removal

H. Schröder, A. Steckenborn · Journal of Micromechanics and Microengineering · 1999 · 77 citations

Engineering, Micropyramidal Hillocks, Silicon On Insulator +18

Injection, intersubband relaxation and recombination in GaAs multiple quantum wells

D. Bimberg, J. Christen, A. Steckenborn et al. · Journal of Luminescence · 1985 · 68 citations

Quantum Science, Engineering, Physics +5