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Electrical and thermal properties of neutron-transmutation-doped Ge at 20 mK
119
Citations
10
References
1990
Year
Electrical EngineeringEngineeringPhysicsBias Temperature InstabilityCharge TransportApplied PhysicsCondensed Matter PhysicsNeutron SourceHot-electron EffectsNeutron-transmutation-doped GeNtd GeNeutron ScatteringSemiconductor Device
We report on hot-electron effects in neutron-transmutation-doped Ge (NTD Ge) near 20 mK. Both static and dynamic electrical properties were measured and compared with a model including both variable-range-hopping conduction and hot-electron effects.
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