Publication | Closed Access
The kinetic aspects of ordering in GaAs1-xSbx grown by organometallic vapor phase epitaxy
83
Citations
24
References
1987
Year
SemiconductorsIi-vi SemiconductorGaas1-xsbx GrownEngineeringPhysicsCrystal Growth TechnologyKinetic AspectsApplied PhysicsCondensed Matter PhysicsMolecular Beam EpitaxyEpitaxial GrowthCompound Semiconductor
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