Complete set of piezoresistive coefficients of CMOS -diffusion

Abstract

The piezoresistive behavior of -diffusions in monocrystalline CMOS-processed silicon is calibrated by independent measurements of the three piezoresistive -coefficients. These are obtained by subjecting integrated resistors on test chips to three distinct stress fields, (a) using a four-point bending bridge and (b) applying a pressure perpendicular to the die surface. This represents a novel method of calibrating stress sensor test chips. The experimentally induced stresses are computed by finite element analysis. Values of , , and are obtained.