Scanning · 1997 · 34 citations · 11 references
Natural SciencesMaterials EngineeringMaterials ScienceAnalytical ChemistryElectronic MaterialsSurface ScienceElectron Beam PhysicsElectron MicroscopyBackscattered Electron ImagingElectron Escape DepthFocused Ion Beam Scanning Electron MicroscopyMicroscope ImagingScanning Electron MicroscopyScanning Electron Microscopy Surface AnalysisSputteringSurface Sputtering
Abstract Common and different aspects of scanning electron microscope (SEM) and scanning ion microscope (SIM) images are discussed from a viewpoint of interaction between ion or electron beams and specimens. The SIM images [mostly using 30 keV Ga focused ion beam (FIB)] are sensitive to the sample surface as well as to low‐voltage SEM images. Reasons for the SIM images as follows: (1) no backscattered‐electron excitation; (2) low yields of backscattered ions; and (3) short ion ranges of 20–40nm, being of the same order of escape depth of secondary electrons (SE) [=(3–5) times the SE mean free path]. Beam charging, channeling, contamination, and surface sputtering are also commented upon.
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