Cavity suppression in nitride based superluminescent diodes

Abstract

We have fabricated two types of InGaN superluminescent diodes applying two different concepts of cavity suppression: a tilted waveguide geometry and passive absorber solution. Both types of devices showed superluminescence behavior, but both eventually lased under the application of high enough current. The lasing threshold turned out to be higher for tilted waveguide devices. By using long (2 mm) waveguides, we managed to demonstrate the power in superluminescent mode exceeding 100 mW in blue/violet part of the spectrum.