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MOCVD growth of device-quality GaN on sapphire using a three-step approach

Wide-bandgap SemiconductorElectrical EngineeringEngineeringMocvd GrowthApplied PhysicsAluminum Gallium NitrideDevice-quality GanGallium OxideGan Power DeviceThree-step ApproachCategoryiii-v SemiconductorOptoelectronics