Japanese Journal of Applied Physics · 1981 · 47 citations · 4 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureMaterials CharacterizationMaterials ChemistryAmorphous MaterialsAmorphous SolidsCrystalline MaterialsMicrostructure AnalysisSilicon MaterialsThin Film AnnealingAmorphous SiliconAnnealingAnnealing Temperature EffectsCrystallite Size AnalysisCrystallite Size DeterminationSiliconSilicon Thin FilmsX-ray Diffraction Analysis
Isochronal annealings have been done on the amorphous-microcrystalline mixed-phase Si:H, and its structure has been investigated through X-ray diffraction and ir absorption measurements. The number of microcrystals increases with an increase in annealing temperature up to 500°C, while crystallite size is kept unchanged. The crystallite size starts growing larger when the annealing temperature exceeds 550°C. On the basis of the results, a structural model has been presented for the mixed-phase Si:H films.
4
Boron Doping of Hydrogenated Silicon Thin Films
Akihisa Matsuda, Mitsuo Matsumura, Satoshi Yamasaki et al. · Japanese Journal of Applied Physics · 1981 · 82 citations