Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films

Abstract

Doping of Si:F:H and Si:H with P has been performed by a glow-discharge technique using PH 3 /SiF 4 +H 2 , PF 5 /SiF 4 +H 2 , PH 3 /SiH 4 +H 2 and PF 5 /SiH 4 +H 2 gaseous mixtures, and high conductive films over 10 0 Ω -1 cm -1 have been obtained. It has also been made clear from X-ray diffraction and Raman-scattering measurements that all the P-doped Si:F:H films (P/Si>5×10 -4 ) as well as high conductive Si:H films deposited under high RF power condition are polycrystalline, while Si:H films prepared under low power remain amorphous and their conductivity is less than 10 -2 Ω -1 cm -1 . It is likely that film conductivity amounting to 10 0 Ω -1 cm -1 should be ascribed to its polycrystalline structure.