Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors

Abstract

Single-crystal silicon thin-film transistors (TFTs) were fabricated within an ultra-large grain thin film on a glassy substrate which was formed by an excimer-laser crystallization method. The field-effect mobility of the TFTs was 460 cm 2 /Vs for electrons. The off-current was less than 3 ×10 -13 A/µm per unit channel width for a wide range of gate voltages.