Highly Reliable Resistive Switching Without an Initial Forming Operation by Defect Engineering

Abstract

The effects of stack and defect engineering of metal-oxide layers on resistive switching uniformity were investigated to obtain resistive random access memory (ReRAM) with excellent switching reliability. Uniform switching, parameters, such as set voltage (Vset), reset voltage (Vreset), low-resistance state, high-resistance state, and retention characteristics, were significantly improved by stack and defect engineering. Furthermore, the initial forming operation, which is a nuisance, was removed to realize cross-point ReRAM.